Magnetoelectric Coupling at the Ni/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Interface

نویسندگان

چکیده

Composite multiferroics containing ferroelectric and ferromagnetic components often have much larger magnetoelectric coupling compared to their single-phase counterparts. Doped or alloyed HfO2-based ferroelectrics may serve as a promising component in composite multiferroic structures potentially feasible for technological applications. Recently, strong charge-mediated at the Ni/HfO2 interface has been predicted using density functional theory calculations. Here, we report on experimental evidence of such Ni/Hf0.5Zr0.5O2(HZO) interface. Using combination operando XAS/XMCD HAXPES/MCDAD techniques, probe element-selectively local magnetic properties Ni/HZO Au/Co/Ni/HZO/W capacitors demonstrate clear polarization effect response nanometer-thick Ni marker layer. The observed electronic band lineup are interpreted based results our theoretical modeling. It elucidates critical role an ultrathin NiO interlayer, which controls sign well provides realistic offset interface, agreement with experiment. Our hold promise use design multifunctional devices compatible modern semiconductor technology.

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ژورنال

عنوان ژورنال: ACS Nano

سال: 2021

ISSN: ['1936-0851', '1936-086X']

DOI: https://doi.org/10.1021/acsnano.1c05001